Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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J304 |
| Part Number | J304 |
| Manufacturer | Motorola |
| Title | JFET High Frequency Amplifier |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating Symbol Value Drain – Gate Voltage Gate–Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDG VGS IG PD – 30 – 30. |
| Features | . |
J304 |
| Part Number | J304 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel RF Amplifier |
| Description | J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25°C unless otherwise noted S. |
| Features | . |
J304 |
| Part Number | J304 |
| Manufacturer | Toshiba |
| Title | 2SJ304 |
| Description | 2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leak. |
| Features | c.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliabi. |
J304 |
| Part Number | J304 |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -30V InterFET J304 and J305 are targeted for low noise low leakage VHF/UHF amplifier designs as well as mixers and oscillators. Gate leakages are typically less than 10pA at room temperatures. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary P. |
| Features |
• InterFET N0026S Geometry • Low Noise: 4 nV/√Hz Typical • Low Ciss: 4.3pF Typical • Low Leakage: 10pA Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Mixers • Oscillators • VHF/UHF Amplifiers Description The -30V InterFET J304 and J305 are targeted for low noise low leakage VHF/UHF amplifier designs as well as mixers and oscillators. Gate leakages are typically le. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | J300 |
National Semiconductor |
N-Channel JFET |
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| 2 | J300 |
Motorola |
JFET HIGH FREQUENCY AMPLIFIER |
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| 3 | J300 |
Siliconix |
n-channel JFET |
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| 4 | J3006G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 5 | J3011G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 6 | J3018G21K |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 7 | J3026G01D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 8 | J3026G21D |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 9 | J3026G21DNL |
PULSE |
PULSEJACKTM Surface Mount 1x1 |
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| 10 | J303 |
NEC |
2SJ303 |
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Desde 2024. D4U Semiconductor.
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