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IS67WVC2M16EALL |
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| Part Number | IS67WVC2M16EALL |
| Manufacturer | ISSI |
| Description | CellularRAM™ (Trademark of MicronTechnology Inc.) products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. This device is a variation of the industry-standard Flash control interface that dramatically increase READ/WRITE bandwidth compared with . |
| Features |
⚫ Single device supports asynchronous , page, and burst operation ⚫ Mixed Mode supports asynchronous write and synchronous read operation ⚫ Dual voltage rails for optional performance ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V ⚫ Asynchronous mode read access : 70ns Interpage Read access : 70ns Intrapage Read access : 25ns ⚫ Burst mode for Read and Write operation 4, 8, 16,32 or Continuous ⚫ Low Power Consumption Asynchronous Operation < 30 mA Intrapage Read < 20mA Burst operation < 45 mA (@104Mhz) Standby < 150 uA(max.) Deep power-down (DPD) < 3uA. |
| Datasheet |
 IS67WVC2M16EALL Data Sheet
PDF 933.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS67WVC2M16ECLL |
ISSI |
32Mb Async/Page/Burst CellularRAM |
|
| 2 | IS67WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM |
|
| 3 | IS67WVC4M16ALL |
ISSI |
64Mb Async/Page/Burst CellularRAM |
|
| 4 | IS67WVC4M16EALL |
ISSI |
64Mb Async/Page/Burst CellularRAM |
|
| 5 | IS67WVC4M16ECLL |
ISSI |
64Mb Async/Page/Burst CellularRAM |
|
| 6 | IS67WV1M16EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 7 | IS67WV51216DBLL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 8 | IS67WV51216EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
|
| 9 | IS67WVE1M16EALL |
ISSI |
16Mb Async/Page PSRAM |
|
| 10 | IS67WVE1M16EBLL |
ISSI |
16Mb Async/Page PSRAM |
|
Desde 2024. D4U Semiconductor.
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