IS66WVH16M8BLL |
Part Number | IS66WVH16M8BLL |
Manufacturer | ISSI |
Description | 16M x 8 HyperRAM™ IS66WVH16M8ALL/BLL IS67WVH16M8ALL/BLL 6(37(0%(5 2018 Overview The IS66/67WVH16M8ALL/BLL are integrated memory device of 128Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die. The device supports a HyperBus interface, Very Low Signal Count. |
Features |
RWDS DCARS Timing – During read transactions RWDS is offset by a second clock, phase shifted from CK – The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye Performance Summary Read Transaction Timings Maximum Clock Rate at 1.8V VCC/VCCQ Maximum Clock Rate at 3.0V VCC/VCCQ Maximum Access Time, (tACC at 166 MHz) Maximum CS# Access Time to first word at 166 MHz (excluding refresh latency) 166 MHz 100 MHz 36 ns 56 ns High Performance Up to 333MB/s Double-Data Rate (DDR) - two data transfers per clock 166-MHz clock rate (333 MB/s) at 1.8V VCC 100-MH. |
Datasheet |
IS66WVH16M8BLL Data Sheet
PDF 2.26MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IS66WVH16M8ALL |
ISSI |
16M x 8 HyperRAM | |
2 | IS66WVH8M8ALL |
ISSI |
8M x 8 HyperRAM | |
3 | IS66WVH8M8BLL |
ISSI |
8M x 8 HyperRAM | |
4 | IS66WVH8M8DALL |
ISSI |
8M x 8 HyperRAM | |
5 | IS66WVH8M8DBLL |
ISSI |
8M x 8 HyperRAM | |
6 | IS66WVH8M8EDALL |
ISSI |
8M x 8 HyperRAM | |
7 | IS66WVH8M8EDBLL |
ISSI |
8M x 8 HyperRAM | |
8 | IS66WVH8M8FALL |
ISSI |
64Mb HyperRAM | |
9 | IS66WVH8M8FBLL |
ISSI |
64Mb HyperRAM | |
10 | IS66WV1M16DALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |