IS66WV1M16EBLL |
Part Number | IS66WV1M16EBLL |
Manufacturer | ISSI |
Description | The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2. |
Features |
High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL ) CMOS Lower Power Operation Single Power Supply VDD =1.7V~1.95V( IS66WV1M16EALL ) VDD =2.5V~3.6V (IS66/67WV1M16EBLL ) Three State Outputs Data Control for Upper and Lower bytes Lead-free Available DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power. |
Datasheet |
IS66WV1M16EBLL Data Sheet
PDF 667.79KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IS66WV1M16EALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
2 | IS66WV1M16DALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
3 | IS66WV1M16DBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
4 | IS66WV51216ALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
5 | IS66WV51216BLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
6 | IS66WV51216DALL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
7 | IS66WV51216DBLL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
8 | IS66WV51216EALL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
9 | IS66WV51216EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
10 | IS66WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM |