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IS46LR16320D |
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| Part Number | IS46LR16320D |
| Manufacturer | ISSI |
| Description | The IS43/46LR16320D is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture . |
| Features |
• JEDEC standard 1.8V power supply • VDD = 1.8V, VDDQ = 1.8V • Four internal banks for concurrent operation • MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) • Fully differential clock inputs (CK, /CK) • All inputs except data & DM are sampled at the rising edge of the system clock • Data I/O transaction on both edges of data strobe • Bidirectional data strobe per byte of data (DQS) • DM for write masking only • Edge aligned data & data strobe output • Center aligned data & data strobe input • 64ms refresh peri. |
| Datasheet |
 IS46LR16320D Data Sheet
PDF 2.78MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS46LR16320B |
ISSI |
8M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 2 | IS46LR16320C |
ISSI |
8M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 3 | IS46LR16128B |
ISSI |
2Gb Mobile DDR SDRAM |
|
| 4 | IS46LR16160F |
ISSI |
4M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 5 | IS46LR16160G |
ISSI |
4M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 6 | IS46LR16200D |
ISSI |
1M x 16Bits x 2Banks Mobile DDR SDRAM |
|
| 7 | IS46LR16400B |
ISSI |
1M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 8 | IS46LR16400C |
ISSI |
1M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 9 | IS46LR16640A |
ISSI |
16M x 16Bits x 4Banks Mobile DDR SDRAM |
|
| 10 | IS46LR16640C |
ISSI |
1Gb Mobile DDR SDRAM |
|
Desde 2024. D4U Semiconductor.
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