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IS42VM16160M |
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| Part Number | IS42VM16160M |
| Manufacturer | ISSI |
| Description | These IS42/45VM16160G are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achie. |
| Features |
▪ JEDEC standard1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 8K refresh cycle every 16ms (A2 grade) or 64ms (Industrial, A1 grade) • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Programmable CAS Latency : 2,3 clocks • All inputs and outputs referenced to the positive edge of the system clock • Data mask function by DQM • Internal 4 banks operation • Burst Read Single Write operation • Special Function Support - PASR(Partial Array Self Refresh) - Auto TCSR(Temperatu. |
| Datasheet |
 IS42VM16160M Data Sheet
PDF 932.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS42VM16160E |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM |
|
| 2 | IS42VM16200C |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM |
|
| 3 | IS42VM16200D |
ISSI |
1M x 16Bits x 2Banks Low Power Synchronous DRAM |
|
| 4 | IS42VM16400K |
ISSI |
1M x 16Bits x 4Banks Mobile Synchronous DRAM |
|
| 5 | IS42VM16800E |
ISSI |
128Mb Mobile Synchronous DRAM |
|
| 6 | IS42VM16800F |
ISSI |
2M x 16Bits x 4Banks Mobile Synchronous DRAM |
|
| 7 | IS42VM32100C |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM |
|
| 8 | IS42VM32100D |
ISSI |
512K x 32Bits x 2Banks Low Power Synchronous DRAM |
|
| 9 | IS42VM32160D |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
| 10 | IS42VM32160E |
ISSI |
4M x 32Bits x 4Banks Mobile Synchronous DRAM |
|
Desde 2024. D4U Semiconductor.
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