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| Part Number | IRL640S |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRL640S |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 IRL640S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.) Absolu. |
| Features | ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.145Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Curre. |
| Part Number | IRL640S |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power . |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, rugg. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL640 |
Fairchild Semiconductor |
Power MOSFET |
|
| 2 | IRL640 |
International Rectifier |
POWER MOSFET |
|
| 3 | IRL640 |
Vishay |
Power MOSFET |
|
| 4 | IRL640A |
Fairchild Semiconductor |
Advanced Power MOSFET |
|
| 5 | IRL640SPBF |
International Rectifier |
POWER MOSFET |
|
| 6 | IRL60B216 |
International Rectifier |
Power MOSFET |
|
| 7 | IRL60B216 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRL60HS118 |
Infineon |
MOSFET |
|
| 9 | IRL60S216 |
Infineon |
IR MOSFET |
|
| 10 | IRL60S216 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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