IRL3705NPBF Datasheet. existencias, precio

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IRL3705NPBF Power MOSFET


IRL3705NPBF
Part Number IRL3705NPBF
Distributor Stock Price Buy
Infineon
IRL3705NPbF
Part Number IRL3705NPbF
Manufacturer Infineon
Title Power MOSFET
Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient an.
Features rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  .
INCHANGE
IRL3705NPbF
Part Number IRL3705NPbF
Manufacturer INCHANGE
Title N-Channel MOSFET
Description isc N-Channel MOSFET Transistor IRL3705NPBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Lead-Free ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variet.
Features
·Static drain-source on-resistance: RDS(on) ≤10mΩ
·Lead-Free
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 55 V VGS Gate-Source Voltage ±16 V I.

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