Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRFU320 |
| Part Number | IRFU320 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor IRFU320 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching V. |
| Features |
·Low drain-source on-resistance: RDS(ON) ≤1.8Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage ±20. |
IRFU320 |
| Part Number | IRFU320 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFETs |
| Description | IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the br. |
| Features |
• 3.1A, 400V • rDS(ON) = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR320 IRFU320 PACKAGE TO-252AA TO-251AA BRAND IFR320 IFU320 Symbol D G NOTE. |
IRFU320 |
| Part Number | IRFU320 |
| Manufacturer | Vishay Siliconix |
| Title | Power MOSFET |
| Description | Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead vers. |
| Features |
• Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching Available • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combinat. |
IRFU320 |
| Part Number | IRFU320 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFETs |
| Description | IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the br. |
| Features |
• 3.1A, 400V • rDS(ON) = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR320 IRFU320 PACKAGE TO-252AA TO-251AA BRAND IFR320 IFU320 Symbol D G NOTE. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFU320A |
Samsung |
Power MOSFET |
|
| 2 | IRFU320B |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 3 | IRFU310 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFU310 |
Vishay Siliconix |
Power MOSFET |
|
| 5 | IRFU310 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRFU310A |
Fairchild Semiconductor |
Power MOSFET |
|
| 7 | IRFU310B |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 8 | IRFU3303 |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRFU3303PBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFU330A |
Samsung |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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