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IRFU220B 200V N-Channel MOSFET

IRFU220B


IRFU220B
Part Number IRFU220B
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IRFU220B

INCHANGE
IRFU220B
Part Number IRFU220B
Manufacturer INCHANGE
Title N-Channel MOSFET
Description Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF.
Features
·With TO-251(IPAK) packaging
·Uninterruptible power supply
·High speed switching
·Hard switched and high frequency circuits
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFU220B
·APPLICATIONS
·Switching applications
·DC-DC converters
·High frequency
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE V.

IRFU220B

ON Semiconductor
IRFU220B
Part Number IRFU220B
Manufacturer ON Semiconductor
Title 200V N-Channel MOSFET
Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.
Features
• 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Con.

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