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IRFP360 Power MOSFET


IRFP360
Part Number IRFP360
Distributor Stock Price Buy
IXYS
IRFP360
Part Number IRFP360
Manufacturer IXYS
Title N-Channel MOSFET
Description MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC .
Features
• Fast switching times
• International standard packages
• Low R HDMOSTM process DS (on)
• Rugged polysilicon gate cell structure
• High commuting dv/dt rating Applications
• DC choppers
• Motor Controls
• Switch-mode and resonant-mode
• Uninterruptable power supplies (UPS) Advantages
• Space savings
• High power density
• Easy to mount with 1 screw (isolated mounting screw hole) This dat.
Vishay
IRFP360
Part Number IRFP360
Manufacturer Vishay
Title Power MOSFET
Description Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-2.
Features
• Dynamic dV/dt rated
• Repetitive avalanche rated Available
• Isolated central mounting hole
• Fast switching Available
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For e.
Inchange Semiconductor
IRFP360
Part Number IRFP360
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD.
Features
·Drain Current
  –ID= 23A@ TC=25℃
·Drain Source Voltage- : VDSS= 400V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max)
·Fast Switching DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current.
Intersil Corporation
IRFP360
Part Number IRFP360
Manufacturer Intersil Corporation
Title N-Channel Power MOSFET
Description www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode.
Features
• 23A, 400V
• rDS(ON) = 0.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP360 PACKAGE TO-247 BRAND IRFP360 Symbol D NOTE: When ordering, use the enti.

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