Part Number | IRFP360 |
Distributor | Stock | Price | Buy |
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Part Number | IRFP360 |
Manufacturer | IXYS |
Title | N-Channel MOSFET |
Description | MegaMOSTMFET N-Channel Enhancement Mode IRFP 360 VDSS = 400 V ID25 = 23 A RDS(on) = 0.20 Ω Preliminary data Symbol VDSS V DGR VGS VGSM ID25 ID100 IDM IAR EAR dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1.0 MΩ Continuous Transient TC . |
Features |
• Fast switching times • International standard packages • Low R HDMOSTM process DS (on) • Rugged polysilicon gate cell structure • High commuting dv/dt rating Applications • DC choppers • Motor Controls • Switch-mode and resonant-mode • Uninterruptable power supplies (UPS) Advantages • Space savings • High power density • Easy to mount with 1 screw (isolated mounting screw hole) This dat. |
Part Number | IRFP360 |
Manufacturer | Vishay |
Title | Power MOSFET |
Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-2. |
Features |
• Dynamic dV/dt rated • Repetitive avalanche rated Available • Isolated central mounting hole • Fast switching Available • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For e. |
Part Number | IRFP360 |
Manufacturer | Inchange Semiconductor |
Title | N-Channel MOSFET Transistor |
Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A PD. |
Features |
·Drain Current –ID= 23A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.2Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 400 ±20 V V ID Drain Current. |
Part Number | IRFP360 |
Manufacturer | Intersil Corporation |
Title | N-Channel Power MOSFET |
Description | www.DataSheet4U.com IRFP360 Data Sheet July 1999 File Number 2290.3 23A, 400V, 0.200 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode. |
Features |
• 23A, 400V • rDS(ON) = 0.200Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP360 PACKAGE TO-247 BRAND IRFP360 Symbol D NOTE: When ordering, use the enti. |
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