Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | IRFP350 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFP350 |
| Manufacturer | Fairchild Semiconductor |
| Title | Power MOSFET |
| Description | $GYDQFHG 3RZHU 026)(7 IRFP350 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS . |
| Features | ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain C. |
| Part Number | IRFP350 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
| Part Number | IRFP350 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-2. |
| Features |
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effec. |
| Part Number | IRFP350 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | www.DataSheet4U.com IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the bre. |
| Features |
• 16A, 400V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 BRAND IRFP350 Symbol D NOTE: When ordering, include the . |
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| 2 | IRFP350A |
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| 4 | IRFP350FI |
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| 7 | IRFP350LC |
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| 8 | IRFP350R |
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Desde 2024. D4U Semiconductor.
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