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IRFP31N50L Power MOSFET


IRFP31N50L
Part Number IRFP31N50L
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INCHANGE
IRFP31N50L
Part Number IRFP31N50L
Manufacturer INCHANGE
Title N-Channel MOSFET
Description iscN-Channel MOSFET Transistor IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching .
Features
·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX)
·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 .
Vishay Siliconix
IRFP31N50L
Part Number IRFP31N50L
Manufacturer Vishay Siliconix
Title Power MOSFET
Description IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 210 58 100 Single 0.15 TO-247AC D G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES • Super Fast Body.
Features
• Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available
• Lower Gate Charge Results in Simpler Drive RoHS* Requirements COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise Immunity
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Serve.

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