Part Number | IRFP31N50L |
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Part Number | IRFP31N50L |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | iscN-Channel MOSFET Transistor IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching . |
Features |
·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 . |
Part Number | IRFP31N50L |
Manufacturer | Vishay Siliconix |
Title | Power MOSFET |
Description | IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 210 58 100 Single 0.15 TO-247AC D G S D G ORDERING INFORMATION Package Lead (Pb)-free S N-Channel MOSFET SnPb FEATURES • Super Fast Body. |
Features |
• Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Available • Lower Gate Charge Results in Simpler Drive RoHS* Requirements COMPLIANT • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Serve. |
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