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| Part Number | IRFP22N50A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFP22N50A |
| Manufacturer | International Rectifier |
| Title | SMPS MOSFET |
| Description | PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Chara. |
| Features | on Boost Notes through are on page 8 www.irf.com 1 12/15/99 IRFP22N50A Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Re. |
| Part Number | IRFP22N50A |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | iscN-Channel MOSFET Transistor IRFP22N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching . |
| Features |
·Low drain-source on-resistance: RDS(ON) =0.23Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 . |
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|---|---|---|---|---|
| 1 | IRFP22N50APBF |
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| 2 | IRFP22N60K |
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| 9 | IRFP23N50L |
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Desde 2024. D4U Semiconductor.
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