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| Part Number | IRFD9120 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFD9120 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standar. |
| Features |
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • For Automatic Insertion • End Stackable • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-eff. |
| Part Number | IRFD9120 |
| Manufacturer | TEMIC |
| Title | P-Channel MOSFET |
| Description | TEMIC Siliconix IRFD9120j9123 P-Channel Enhancement-Mode lransistors Product Summary Part Number IRFD9120 IRFD9123 V(BR)nSS (V) -100 -60 rnS(on) (Q) 0.60 0.80 In (A) -1.0 -0.8 4·PinDIP G D S Thp View S DD P·Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Parame. |
| Features | ate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(tb) IGSS loss IO(an) Drain-Source On-State Resistanceb roS(on) Forward 1tansconductanceb gr, VGs=OY,Io= -2501lA IRFD9120 IRFD9123 Vos = VGs. 10 = -250 IlA VOS = OY,VGS = ±20V VOS = V(BR)DSS. VGS = 0 V Vos = 0.8XV(BR)DSS. VGS - OY,TJ -125'C Vos = -lOY, VGS = -lOY IRFD9120 IRFD91. |
| Part Number | IRFD9120 |
| Manufacturer | Intersil Corporation |
| Title | P-Channel Power MOSFET |
| Description | IRFD9120 Data Sheet July 1999 File Number 2285.3 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power fi. |
| Features |
• 1.0A, 100V • rDS(ON) = 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9120 PACKAGE HEXDIP BRAND G IRFD9120 S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-45 CAUTION: These devices are s. |
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Desde 2024. D4U Semiconductor.
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