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| Part Number | IRFD121 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFD121 |
| Manufacturer | GE |
| Title | FIELD EFFECT POWER TRANSISTOR |
| Description | ~D~[P~ FIELD EFFECT POWER TRANSISTOR IRFD120,121 D82CL2,K2 1.3 AMPERES 100,60 VOLTS RDS(ON) = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has be. |
| Features |
• Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE 4-PIN DIP DIMENS. |
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Desde 2024. D4U Semiconductor.
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