Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF430 |
| Part Number | IRF430 |
| Manufacturer | Seme LAB |
| Title | N-Channel Power MOSFET |
| Description | IRF430 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. N–CHANNEL POWER MOSFET 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 22.23 (0.875) Max. 11.43 (0.450) 6.35 (0.250) 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 12.19 (0.48) 11.18 (0.44) 1.63 (0.064) 1.52 (0.060) VDS. |
| Features |
16.97 (0.668) 16.87 (0.664)
• HERMETICALLY SEALED TO –3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS Case – Drain TO –3 Metal Package Pin 1 – Gate Pin 2 – Source • SCREENING OPTIONS AVAILABLE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current (VGS = 0 , Tcase = 25°C) Continuous Drain Current (VGS. |
IRF430 |
| Part Number | IRF430 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mod. |
| Features |
• 4.5A, 500V • rDS(ON) = 1.500Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF430 PACKAGE TO-204AA BRAND IRF430 Symbol D NOTE: When ordering, use the ent. |
IRF430 |
| Part Number | IRF430 |
| Manufacturer | International Rectifier |
| Title | N-Channel Power MOSFET |
| Description | PD - 90336F IRF430 REPETITIVE A V ALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the key to International Rectifier’s . |
| Features | n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Sourc. |
IRF430 |
| Part Number | IRF430 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | . |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF431 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | IRF431 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | IRF431 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 4 | IRF432 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF432 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF432 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 7 | IRF433 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 8 | IRF433 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 9 | IRF433 |
Samsung semiconductor |
N-Channel Power MOSFET |
|
| 10 | IRF4000 |
International Rectifier |
IEEE 802.3af Compliant PoE Switch |
|
Desde 2024. D4U Semiconductor.
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