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IRF3709ZCS |
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| Part Number | IRF3709ZCS |
| Manufacturer | International Rectifier |
| Description | PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.3m: Qg 17nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current D2Pak IRF3709ZCS TO-262 IRF3709ZCL www.DataSheet4U.com Absolute Maximu. |
| Features | Notes through are on page 11 www.irf.com 1 1/16/04 IRF3709ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth . |
| Datasheet |
 IRF3709ZCS Data Sheet
PDF 335.38KB |
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IRF3709ZCS |
| Part Number | IRF3709ZCS |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS . ·High Frequency Synchronous Buck Converters for Computer Processor Power. . |
| Features | PE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1.35 2.25 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 6.3 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 24V; VGS= 0;Tj =25℃ VDS= 24V; VGS= 0;Tj =125℃ 1 µA 150 VSD Diode Forward On-Voltage . |
IRF3709ZCS |
| Part Number | IRF3709ZCS |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | IRF3709ZCS-VB IRF3709ZCS-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0024 at VGS = 10 V 0.0027 at VGS = 4.5 V ID (A)a, e 98 98 Qg (Typ) 82 nC D2PAK (TO-263) G D S D G S N-Channel MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg an. |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 98a, e Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID 98e 28.8b, c A TA . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3709ZCL |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF3709ZCLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 3 | IRF3709ZCSPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRF3709Z |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF3709Z |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF3709ZL |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | IRF3709ZLPBF |
International Rectifier |
(IRF3709xPbF) HEXFET Power MOSFET |
|
| 8 | IRF3709ZPBF |
International Rectifier |
(IRF3709xPbF) HEXFET Power MOSFET |
|
| 9 | IRF3709ZS |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRF3709ZS |
INCHANGE |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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