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IRF340 N-Channel Power MOSFETs


IRF340
Part Number IRF340
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Inchange Semiconductor
IRF340
Part Number IRF340
Manufacturer Inchange Semiconductor
Title N-Channel MOSFET Transistor
Description ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid .
Features Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF340
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage.
Samsung semiconductor
IRF340
Part Number IRF340
Manufacturer Samsung semiconductor
Title N-Channel Power MOSFET
Description .
Features .
International Rectifier
IRF340
Part Number IRF340
Manufacturer International Rectifier
Title N-Channel Power MOSFET
Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv.
Features
 Repetitive Avalanche Ratings
 Dynamic dv/dt Rating
 Hermetically Sealed
 Simple Drive Requirements
 ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Der.
Fairchild Semiconductor
IRF340
Part Number IRF340
Manufacturer Fairchild Semiconductor
Title N-Channel Power MOSFET
Description .
Features .

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