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IRF2804S HEXFET Power MOSFET


IRF2804S
Part Number IRF2804S
Distributor Stock Price Buy
FreesCale Electronics
IRF2804S
Part Number IRF2804S
Manufacturer FreesCale Electronics
Title HEXFET Power MOSFET
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive .
Features l l l l l HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V RDS(on) = 2.0mΩ‰ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additi.
INCHANGE
IRF2804S
Part Number IRF2804S
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Static drain-source on-resistance: RDS(on) ≤6mΩ@VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLU.
Features MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 40 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=75A 2 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 40V; VGS= 0;Tj =25℃ VDS= 40V; VGS= 0;Tj =125℃ 20 µA 250 VSD Diode Forward On-Voltage IS= 75A.

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