Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
IRF1010EZ |
| Part Number | IRF1010EZ |
| Manufacturer | International Rectifier |
| Title | AUTOMOTIVE MOSFET |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive . |
| Features | O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF1010E |
International Rectifier |
Power MOSFET |
|
| 2 | IRF1010E |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF1010EL |
International Rectifier |
Power MOSFET |
|
| 4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |
|
| 6 | IRF1010ES |
International Rectifier |
Power MOSFET |
|
| 7 | IRF1010ES |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRF1010ESPbF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET |
|
| 10 | IRF1010EZLPbF |
International Rectifier |
POWER MOSFET |
|
Desde 2024. D4U Semiconductor.
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