Part Number | IPU80R1K4CE |
Distributor | Stock | Price | Buy |
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Part Number | IPU80R1K4CE |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. . |
Features |
·Static drain-source on-resistance: RDS(on)≤1.4Ω(@VGS= 10V; ID= 2.3A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGS Gate-Source Voltage ±20 V ID Dr. |
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