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IPB133N12NM6 |
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| Part Number | IPB133N12NM6 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | . . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . . |
| Features |
• N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21 • MSL 1 classified according to J‑STD‑020 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 120 V RDS(on),max 13.3 mΩ ID 55 A Qoss 36 nC QG 15 nC Qrr (1000 A. |
| Datasheet |
 IPB133N12NM6 Data Sheet
PDF 721.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB136N08N3G |
Infineon |
Power-Transistor |
|
| 2 | IPB13N03LB |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPB100N04S3-03 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 6 | IPB100N04S4-H2 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 7 | IPB100N06S2-05 |
Infineon Technologies |
Power-Transistor |
|
| 8 | IPB100N06S2L-05 |
Infineon Technologies |
Power-Transistor |
|
| 9 | IPB100N06S3-03 |
Infineon Technologies |
Power-Transistor |
|
| 10 | IPB100N06S3L-03 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
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