3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? 7I 6? B.">
Part Number | IPB097N08N3 |
Distributor | Stock | Price | Buy |
---|
Part Number | IPB097N08N3 |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | Isc N-Channel MOSFET Transistor IPB097N08N3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABS. |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 80 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPB097N08N3G |
Infineon |
Power-Transistor | |
2 | IPB090N06N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPB090N06N3 |
Infineon |
Power-Transistor | |
4 | IPB090N06N3G |
Infineon |
Power-Transistor | |
5 | IPB091N06NG |
Infineon Technologies |
Power-Transistor | |
6 | IPB093N04LG |
Infineon Technologies |
Power-Transistor | |
7 | IPB096N03LG |
Infineon |
Power-Transistor | |
8 | IPB09N03LA |
Infineon Technologies AG |
OptiMOS 2 Power-Transistor | |
9 | IPB09N03LAG |
Infineon Technologies |
Power-Transistor | |
10 | IPB009N03L |
Infineon |
MOSFET |