(>.;?6?@<> 7NJ]ZN[ Q 2 CDCG:D49:? 8 ' ) -  . 7@B- ' * Q) AD:> :J65 D649? @=@8I 7@B    4@.">

IPB065N03L Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

IPB065N03L Power-Transistor


IPB065N03L
Part Number IPB065N03L
Distributor Stock Price Buy
INCHANGE
IPB065N03L
Part Number IPB065N03L
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=2.
Features Source Breakdown Voltage VGS= 0; ID= 1mA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1 2.2 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A 6.5 mΩ IGSS Gate-Body Leakage Current VGS= 20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 30V; VGS= 0;Tj =25℃ VDS= 30V; VGS= 0;Tj =125℃ 1 µA 100 VSD Diode Forward On-Voltage IF= 30A ;VGS= 0 1.1 V NOTICE: I.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 IPB065N03LG
Infineon Technologies
Power-Transistor Datasheet
2 IPB065N06LG
Infineon Technologies
Power-Transistor Datasheet
3 IPB065N10N3
INCHANGE
N-Channel MOSFET Datasheet
4 IPB065N10N3
Infineon
MOSFET Datasheet
5 IPB065N10N3G
Infineon
MOSFET Datasheet
6 IPB065N15N3G
Infineon
Power Transistor Datasheet
7 IPB067N08N3
Infineon
Power-Transistor Datasheet
8 IPB067N08N3
INCHANGE
N-Channel MOSFET Datasheet
9 IPB067N08N3G
Infineon
Power-Transistor Datasheet
10 IPB06CN10NG
Infineon Technologies
Power-Transistor Datasheet
More datasheet from Infineon
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad