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Part Number | IPB065N03L |
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Part Number | IPB065N03L |
Manufacturer | INCHANGE |
Title | N-Channel MOSFET |
Description | ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Designed for high current, high speed switching, switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(TC=2. |
Features | Source Breakdown Voltage VGS= 0; ID= 1mA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1 2.2 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=30A 6.5 mΩ IGSS Gate-Body Leakage Current VGS= 20V;VDS= 0 100 nA IDSS Zero Gate Voltage Drain Current VDS= 30V; VGS= 0;Tj =25℃ VDS= 30V; VGS= 0;Tj =125℃ 1 µA 100 VSD Diode Forward On-Voltage IF= 30A ;VGS= 0 1.1 V NOTICE: I. |
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