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| Part Number | IPB026N06N |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IPB026N06N |
| Manufacturer | Infineon Technologies |
| Title | Power-Transistor |
| Description | Type OptiMOSTM Power-Transistor Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21. |
| Features |
• Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) IPB026N06N 60 V 2.6 mW 100 A 65 nC 56 nC PG-TO263-3 Type IPB026N06N Package PG-TO26. |
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Desde 2024. D4U Semiconductor.
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