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IGT60R190D1 |
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| Part Number | IGT60R190D1 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IGT60R190D1 IGT60R190D1 600V CoolGaN™ enhancement-mode Power Transistor Features Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC Standards (. |
| Features |
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) 1 SK G G SK 1 Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Gate Drain Kelvin Source Source 8 drain contact 7 1,2,3,4,5,6 Applications Industrial, telecom, datacenter SMPS based on the half-bridge t. |
| Datasheet |
 IGT60R190D1 Data Sheet
PDF 539.59KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IGT60R190D1S |
Infineon |
600V enhancement-mode Power Transistor |
|
| 2 | IGT60R042D1 |
Infineon |
Power Transistor |
|
| 3 | IGT60R070D1 |
Infineon |
600V enhancement-mode Power Transistor |
|
| 4 | IGT65R025D2 |
Infineon |
Power Transistor |
|
| 5 | IGT65R035D2 |
Infineon |
Power Transistor |
|
| 6 | IGT65R045D2 |
Infineon |
Power Transistor |
|
| 7 | IGT65R055D2 |
Infineon |
Power Transistor |
|
| 8 | IGT65R140D2 |
Infineon |
Power Transistor |
|
| 9 | IGT6D10 |
GE |
Insulated Gate Bipolar Transistor |
|
| 10 | IGT6D11 |
GE |
Insulated Gate Bipolar Transistor |
|
Desde 2024. D4U Semiconductor.
|