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IGC07T120T6L |
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| Part Number | IGC07T120T6L |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The information herein is given to describe certain components and shall. |
| Features |
• 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC07T120T6L VCE 1200V ICn 4A Die Size 2.54 x 2.72 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.pos sible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 2.54 x 2.72 1.029 x . |
| Datasheet |
 IGC07T120T6L Data Sheet
PDF 71.22KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IGC07T120T8L |
Infineon |
IGBT |
|
| 2 | IGC07R60DE |
Infineon |
IGBT |
|
| 3 | IGC019S06S1 |
Infineon |
Transistor |
|
| 4 | IGC025S08S1 |
Infineon |
Transistor |
|
| 5 | IGC033S101 |
Infineon |
Transistor |
|
| 6 | IGC033S10S1 |
Infineon |
Transistor |
|
| 7 | IGC037S12S1 |
Infineon |
Transistor |
|
| 8 | IGC03R60DE |
Infineon |
IGBT |
|
| 9 | IGC04R60DE |
Infineon |
IGBT |
|
| 10 | IGC05R60DE |
Infineon |
IGBT |
|
Desde 2024. D4U Semiconductor.
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