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| Distributor | Stock | Price | Buy |
|---|
I2N60 |
| Part Number | I2N60 |
| Manufacturer | ROUM |
| Title | 2A 600V N-channel Enhancement Mode Power MOSFET |
| Description | These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2 Features ● Fast Switching ● Low ON. |
| Features |
● Fast Switching ● Low ON Resistance(Rdson≤4.5Ω) ● Low Gate Charge(Typ:8nC) ● Low Reverse Transfer Capacitances(Typ:3.8pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor. 4 Electrical Characteristics . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | I2N65 |
nELL |
N-Channel PowerMOSFET |
|
| 2 | I2000RW |
MicroPower Direct |
Ultra-Miniature 20W Wide 2:1 Input Range DC/DC Converters |
|
| 3 | I2003-6IPN1722A |
Illuminant |
TFT LCM |
|
| 4 | I2420-6OMN4823A |
Illuminant |
LCM |
|
| 5 | I2421-7IBN2432B |
Illuminant |
TFT LCM |
|
| 6 | I2501-6IGN9624B |
Illuminant |
LCM |
|
| 7 | I25N10 |
ROUM |
25A 100V N-channel Enhancement Mode Power MOSFET |
|
| 8 | I2779A |
ETC |
Low-Cost Notebook EMI Reduction |
|
| 9 | I2812-7IPT2432A |
Illuminant |
TFT LCM |
|
| 10 | I2SK3564 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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