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| Part Number | HUF75329D3S |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HUF75329D3S |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performa. |
| Features |
• 20A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-252AA GATE SOURCE DRAIN (FLANGE) Produ. |
| Part Number | HUF75329D3S |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | Data Sheet HUF75329D3S October 2013 N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performa. |
| Features |
• 20A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.onsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Packaging JEDEC TO-252AA G S GATE SOURCE DRAIN (FLANGE) ©2001 Semicon. |
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| 1 | HUF75329D3 |
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| 2 | HUF75329D3 |
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| 3 | HUF75329G3 |
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| 5 | HUF75329P3 |
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| 6 | HUF75329P3 |
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| 7 | HUF75329S3S |
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| 8 | HUF75329S3S |
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| 9 | HUF75321D3 |
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| 10 | HUF75321D3 |
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