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| Part Number | HGTP12N60B3D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTP12N60B3D |
| Manufacturer | Intersil Corporation |
| Title | N-Channel IGBT |
| Description | HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188. The IGBT is ideal for many high volt. |
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| 1 | HGTP12N60B3 |
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| 2 | HGTP12N60A4 |
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| 3 | HGTP12N60A4 |
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| 4 | HGTP12N60A4D |
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| 5 | HGTP12N60A4D |
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| 6 | HGTP12N60A4D |
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| 7 | HGTP12N60C3 |
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| 9 | HGTP12N60C3D |
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| 10 | HGTP12N60C3D |
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