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| Part Number | HGTG7N60A4 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTG7N60A4 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel IGBT |
| Description | HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance o. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been opti. |
| Part Number | HGTG7N60A4 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel IGBT |
| Description | TM HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 4826.2 600V, SMPS Series N-Channel IGBT The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These . |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been opti. |
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| 1 | HGTG7N60A4D |
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| 2 | HGTG7N60A4D |
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| 3 | HGTG7N60A4D |
ON Semiconductor |
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| 5 | HGTG10N120BN |
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| 6 | HGTG10N120BND |
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| 7 | HGTG10N120BND |
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| 8 | HGTG10N120BND |
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| 9 | HGTG11N120CN |
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| 10 | HGTG11N120CN |
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Desde 2024. D4U Semiconductor.
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