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| Part Number | HGTD3N60C3S |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HGTD3N60C3S |
| Manufacturer | Fairchild Semiconductor |
| Title | 6A/ 600V/ UFS Series N-Channel IGBTs |
| Description | The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varie. |
| Features | of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC mot. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HGTD3N60C3 |
Fairchild Semiconductor |
6A/ 600V/ UFS Series N-Channel IGBTs |
|
| 2 | HGTD3N60A4 |
Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT |
|
| 3 | HGTD3N60A4S |
Fairchild Semiconductor |
600V/ SMPS Series N-Channel IGBT |
|
| 4 | HGTD3N60A4S |
Intersil Corporation |
600V/ SMPS Series N-Channel IGBT |
|
| 5 | HGTD3N60B3S |
Intersil Corporation |
7A/ 600V/ UFS Series N-Channel IGBTs |
|
| 6 | HGTD10N40F1 |
Intersil Corporation |
10A/ 400V and 500V N-Channel IGBTs |
|
| 7 | HGTD10N40F1S |
Intersil Corporation |
10A/ 400V and 500V N-Channel IGBTs |
|
| 8 | HGTD10N50F1 |
Intersil Corporation |
10A/ 400V and 500V N-Channel IGBTs |
|
| 9 | HGTD10N50F1S |
Intersil Corporation |
10A/ 400V and 500V N-Channel IGBTs |
|
| 10 | HGTD1N120BNS |
Fairchild Semiconductor |
5.3A/ 1200V/ NPT Series N-Channel IGBT |
|
Desde 2024. D4U Semiconductor.
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