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| Part Number | HAT2016R |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | HAT2016R |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon N-Channel Power MOSFET |
| Description | HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-438 H (Z) 9th. Edition June 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate. |
| Features |
• • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP –8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2016R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipatio. |
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