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GS82612DT19 |
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| Part Number | GS82612DT19 |
| Manufacturer | GSI Technology |
| Description | GS82612DT19/37CE/LE-350M/250M (S/Q/V) GS81332DT19/37CE/LE-350M/250M (S/Q/V) GS8692DT19/37CE/LE-350M/250M (S/Q/V) 165-Bump CCGA & LGA Rad-Hard SRAM Military Temp 288Mb/144Mb/72Mb Burst of 4 SigmaQuad-II+TM 350 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Aerospace-Level Product • 2.0 clock Latency with DLL on • 1.0 clock Latency with DLL off • O. |
| Features |
• Aerospace-Level Product • 2.0 clock Latency with DLL on • 1.0 clock Latency with DLL off • Optional DLL-controlled output timing • Can be operated with DLL on or off • Simultaneous Read and Write SigmaQuad™ Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface • Byte Write controls sampled at data-in time • Burst of 4 Read and Write • Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs • 1.8 V +100/ –100 mV core power supply • 1.5 V or 1.8 V HSTL Interface • Pipelined read operation • Fully coherent read and write pipelines • ZQ . |
| Datasheet |
 GS82612DT19 Data Sheet
PDF 1.98MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS82612DT19CE |
GSI Technology |
Rad-Hard SRAM |
|
| 2 | GS82612DT19LE |
GSI Technology |
Rad-Hard SRAM |
|
| 3 | GS82612DT37 |
GSI Technology |
Rad-Hard SRAM |
|
| 4 | GS82612DT37CE |
GSI Technology |
Rad-Hard SRAM |
|
| 5 | GS82612DT37LE |
GSI Technology |
Rad-Hard SRAM |
|
| 6 | GS82032AT |
GSI Technology |
2Mb Synchronous Burst SRAM |
|
| 7 | GS8206 |
Genesis |
3-channel constant current LED driver |
|
| 8 | GS820E32A |
GSI Technology |
64K x 32 / 2M Synchronous Burst SRAM |
|
| 9 | GS820E32T |
GSI Technology |
64K x 32 / 2M Synchronous Burst SRAM |
|
| 10 | GS8256418GB-200 |
GSI Technology |
288Mb DCD Sync Burst SRAM |
|
Desde 2024. D4U Semiconductor.
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