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GS61008T |
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| Part Number | GS61008T |
| Manufacturer | GaN Systems |
| Description | The GS61008T is an enhancement mode GaN-onsilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems innovates with industry leading advancements such as patented Island Technology® and GaNPX® packaging. Island Technology® cell layout realizes high-current die and high yield. GaNPX. |
| Features |
• 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 10 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 7.0 x 4.0 mm2 PCB footprint • Dual gate pads for optimal board layout • RoHS 3 (6 + 4) compliant Package Outline Circuit Symbol The top-side thermal pad is internally connected to Source (S. |
| Datasheet |
 GS61008T Data Sheet
PDF 965.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GS61008P |
GaN Systems |
100V enhancement mode GaN transistor |
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| 2 | GS6100 |
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1A power tube built-in LED constant current driver |
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| 3 | GS61004B |
GaN Systems |
100V enhancement mode GaN transistor |
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| 4 | GS6150 |
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| 5 | GS6042 |
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| 6 | GS62C101 |
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| 7 | GS62C102 |
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| 8 | GS66502B |
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| 9 | GS66504B |
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| 10 | GS66506T |
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Desde 2024. D4U Semiconductor.
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