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FS2UM-14A |
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| Part Number | FS2UM-14A |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Description | MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE FS2AS-14A OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 1.0 0.9MAX. 2.3MIN. 10MAX. 0.5 ± 0.2 2.3 2.3 0.8 2.3 1 2 3 wr q w e r e q ¡VDSS ..... 700V ¡rDS (ON) (MAX. |
| Features | Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 700 ±30 — — 2 — — 0.72 — — — — — — — — — Typ. — — — — 3 7.47 7.47 1.2 270 30 5 10 12 33 . |
| Datasheet |
 FS2UM-14A Data Sheet
PDF 45.48KB |
| Distributor | Stock | Price | Buy |
|---|
FS2UM-14A |
| Part Number | FS2UM-14A |
| Manufacturer | VBsemi |
| Title | Power MOSFET |
| Description | FS2UM-14A-VB FS2UM-14A-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 700 VGS = 10 V 2.7 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Single FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dyna. |
| Features |
• Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC TO-220AB S D G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-S. |
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|---|---|---|---|---|
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| 2 | FS2UM-16A |
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| 3 | FS2UM-18A |
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Desde 2024. D4U Semiconductor.
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