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| Part Number | FQP9N30 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FQP9N30 |
| Manufacturer | ON Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N−Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strengt. |
| Features |
• 9.0 A, 300 V, RDS(on) = 450 mW (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 17 nC) • Low Crss (Typ. 16 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Parameter Symbol Value Unit Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche E. |
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Desde 2024. D4U Semiconductor.
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