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| Part Number | FQP50N06L |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | FQP50N06L |
| Manufacturer | Fairchild Semiconductor |
| Title | 60V LOGIC N-Channel MOSFET |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy . |
| Features |
• 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A • Low Gate Charge (Typ. 24.5 nC) • Low Crss (Typ. 90 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C). |
| Part Number | FQP50N06L |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current , high speed switching ·Switch mode power. |
| Features |
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isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 VSD Diode. |
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|---|---|---|---|---|
| 1 | FQP50N06 |
Fairchild Semiconductor |
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|
| 2 | FQP50N06 |
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| 3 | FQP50N06 |
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| 9 | FQP5N20L |
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| 10 | FQP5N30 |
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Desde 2024. D4U Semiconductor.
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