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FQD7P20 |
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| Part Number | FQD7P20 |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power. |
| Features |
• -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6 6 + ; 6 ; !$ + 3-)&74 3-1 * *74 : + (! ; (! ,!(! ; = , !!$ 3 -)&74> 3-)&7. |
| Datasheet |
 FQD7P20 Data Sheet
PDF 858.54KB |
| Distributor | Stock | Price | Buy |
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FQD7P20 |
| Part Number | FQD7P20 |
| Manufacturer | INCHANGE |
| Title | P-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous -200 V ±30 V ID Drain Current-Continuous -5.7 A IDM Drain Current-Single Pluse . |
| Features |
·Drain Current –ID= -5.7A@ TC=25℃ ·Drain Source Voltage- : VDSS= -200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.69Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT. |
FQD7P20 |
| Part Number | FQD7P20 |
| Manufacturer | ON Semiconductor |
| Title | P-Channel MOSFET |
| Description | This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These d. |
| Features |
• −5.7 A, −200 V, RDS(on) = 690 mΩ (Max.) @ VGS = −10 V, ID = −2.85 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) Drain Current − Pulsed (Note 1) G. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQD7P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|
| 2 | FQD7N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 3 | FQD7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 4 | FQD7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 5 | FQD7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 6 | FQD7N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 7 | FQD10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 8 | FQD10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 9 | FQD10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 10 | FQD10N20L |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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