FFSH20120A Datasheet. existencias, precio

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FFSH20120A Silicon Carbide Schottky Diode

FFSH20120A

FFSH20120A
FFSH20120A FFSH20120A
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Part Number FFSH20120A
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 200 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits DATA SHEET www.onsemi.com 1. Cathode 2. Anode Schottky Diode 1 2 TO−247−2LD CASE 340CL MARKING DIAGRAM AYWWZZ FFSH 20120A A YWW ZZ FFSH20120A = Assembly Plant Code = Date Code (Year & Week) = Lot Code = Specific Device Code ORDERING INFORMATION See detaile.
Datasheet Datasheet FFSH20120A Data Sheet
PDF 329.07KB
Distributor Stock Price Buy

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