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FDMS7672AS N-Channel MOSFET

FDMS7672AS

FDMS7672AS
FDMS7672AS FDMS7672AS
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Part Number FDMS7672AS
Manufacturer Fairchild Semiconductor
Description „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advan.
Features General Description „ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky bo.
Datasheet Datasheet FDMS7672AS Data Sheet
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FDMS7672AS

VBsemi
FDMS7672AS
Part Number FDMS7672AS
Manufacturer VBsemi
Title N-Channel MOSFET
Description FDMS7672AS-VB FDMS7672AS-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.003 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A)a, e 120 90 Qg (Typ.) 71 nC FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook PC Core • .
Features
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested APPLICATIONS
• Notebook PC Core
• VRM/POL Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C ID TA = 25 °C.


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