Busque con el número de pieza junto con el fabricante o la descripción
FDI3632 |
Click to view a larger image
| Part Number | FDI3632 |
| Manufacturer | Fairchild Semiconductor |
| Description | FDB3632 / FDP3632 / FDI3632 April 2003 FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 A. |
| Features |
• r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems D DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE . |
| Datasheet |
 FDI3632 Data Sheet
PDF 267.77KB |
| Distributor | Stock | Price | Buy |
|---|
FDI3632 |
| Part Number | FDI3632 |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | FDI3632-VB FDI3632-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0085 at VGS = 10 V 100 0.010 at VGS = 6 V ID (A) 100 85 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC T. |
| Features |
• TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-262 SS D G Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulse. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDI3652 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDI33N25 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FDI025N06 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDI030N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FDI036N10A |
INCHANGE |
N-Channel MOSFET |
|
| 6 | FDI038AN06A0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 7 | FDI038AN06A0 |
ON Semiconductor |
N-Channel MOSFET |
|
| 8 | FDI040N06 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 9 | FDI045N10A |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | FDI045N10A |
Fairchild Semiconductor |
N-Channel PowerTrench MOSFET |
|
Desde 2024. D4U Semiconductor.
|