Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 21 A, 20 V RDS(ON) = 32 mΩ @ VG... |
Features |
• 21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V • Low gate charge (6.5 nC typical) • Fast switching Applications • DC/DC converter • Motor drives • High performance trench technology for extremely low RDS(ON) . D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipati... |
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Desde 2024. D4U Semiconductor.
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