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FBE30S |
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| Part Number | FBE30S |
| Manufacturer | VBsemi |
| Description | FBE30S-VB www.VBsemi.com FBE30S-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 0 4 11 Single 0.85 D FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra l. |
| Features |
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial D2PAK (TO-263) G D S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pul. |
| Datasheet |
 FBE30S Data Sheet
PDF 341.13KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FBE06T |
NMB-MAT |
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| 2 | FBE06T12H |
NMB-MAT |
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| 3 | FBE06T12L |
NMB-MAT |
DC Fan |
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| 4 | FBE06T24H |
NMB-MAT |
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| 5 | FBE06T24L |
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| 6 | FBE22-06N1 |
IXYS Corporation |
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| 7 | FB-10X |
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| 8 | FB-10Z |
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| 9 | FB-1X |
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| 10 | FB-1Z |
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Desde 2024. D4U Semiconductor.
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