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F650B |
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| Part Number | F650B |
| Manufacturer | VBsemi |
| Description | F650B-VB www.VBsemi.com F650B-VB Datasheet N-Channel 200 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 200 RDS(on) (:) 0.058at VGS = 10 V ID (A) 35 FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT TO-220AB APPLICATIONS • Industrial D GD S G S N. |
| Features |
• TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT TO-220AB APPLICATIONS • Industrial D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energya IAR L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and S. |
| Datasheet |
 F650B Data Sheet
PDF 258.07KB |
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Desde 2024. D4U Semiconductor.
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