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F5800 |
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| Part Number | F5800 |
| Manufacturer | VBsemi |
| Description | F5800-VB F5800-VB Datasheet P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.049 at VGS = - 10 V - 30 0.054 at VGS = - 4.5 V ID (A)a - 4.8 - 4.1 Qg (Typ.) 5.1 nC FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch 3 mm TSOP-6 Top V iew 1 6 2 5 3 4 . |
| Features |
• Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch 3 mm TSOP-6 Top V iew 1 6 2 5 3 4 2.85 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Ope. |
| Datasheet |
 F5800 Data Sheet
PDF 219.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F5800A |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow |
|
| 2 | F5800B |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow |
|
| 3 | F5800C |
ETC |
High Precision Low - Complexity Low - Pressure LED Constant Flow |
|
| 4 | F5-75R06KE3_B5 |
Infineon |
IGBT |
|
| 5 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 6 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH |
|
| 7 | F5019 |
CSF |
Froide |
|
| 8 | F5033 |
Fuji Electric |
INTELLIGENT POWER MOSFET |
|
| 9 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 10 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
Desde 2024. D4U Semiconductor.
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