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F5305S |
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| Part Number | F5305S |
| Manufacturer | VBsemi |
| Description | F5305S-VB www.VBsemi.com F5305S-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.048at VGS = - 10 V - 60 0.060at VGS = - 4.5 V ID (A) - 35 - 30 Qg (Typ.) 60 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) S G APPLICATIONS • Power Switch • Load Switch in High Current Applications • DC/DC Converters GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maxim. |
| Datasheet |
 F5305S Data Sheet
PDF 173.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F5-75R06KE3_B5 |
Infineon |
IGBT |
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| 2 | F5001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
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| 3 | F5001H |
Fuji Electric |
INTELIGENT POWER SWITCH |
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| 4 | F5019 |
CSF |
Froide |
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| 5 | F5033 |
Fuji Electric |
INTELLIGENT POWER MOSFET |
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| 6 | F50D1G41LB-50YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
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| 7 | F50D1G41LB-50YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
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| 8 | F50D1G41LB-66YG2M |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
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| 9 | F50D1G41LB-66YG2ME |
ESMT |
1.8V 1 Gbit SPI-NAND Flash Memory |
|
| 10 | F50D2G41LB-50YG2M |
ESMT |
1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
|
Desde 2024. D4U Semiconductor.
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