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F1S30P05 |
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| Part Number | F1S30P05 |
| Manufacturer | VBsemi |
| Description | F1S30P05-VB F1S30P05-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.019 at VGS = - 10 V 0.025 at VGS = - 4.5 V ID (A)a - 80 - 70 Qg (Typ.) 76 nC FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch www.VBsemi.com D2PAK (TO-263) S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATIN. |
| Features |
• TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch www.VBsemi.com D2PAK (TO-263) S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA. |
| Datasheet |
 F1S30P05 Data Sheet
PDF 193.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F1S30P05SM |
Intersil |
RF1S30P05SM |
|
| 2 | F1000LC120 |
IXYS |
Extra Fast Recovery Diode |
|
| 3 | F1001 |
Polyfet RF Devices |
RF POWER VDMOS TRANSISTOR |
|
| 4 | F100122 |
National Semiconductor |
9-BIT BUFFER |
|
| 5 | F100124 |
National Semiconductor |
Hex TTL-to-ECL Translator |
|
| 6 | F100125 |
National Semiconductor |
Hex ECL-to-TTL Translator |
|
| 7 | F100136 |
National Semiconductor |
4-Stage Counter / Shift Register |
|
| 8 | F100164 |
Fairchild Semiconductor |
16 Input Multiplexer |
|
| 9 | F100164 |
National Semiconductor |
16 Input Multiplexer |
|
| 10 | F100180 |
National Semiconductor |
HIGH-SPEED 6-BIT ADDER |
|
Desde 2024. D4U Semiconductor.
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