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EMP85N10CS |
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| Part Number | EMP85N10CS |
| Manufacturer | Excelliance MOS |
| Description | N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 8.0mΩ 10.5mΩ ID @TC=25℃ 73.0A ID @TA=25℃ 12.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current VGS TC = 25 °C T. |
| Features | mbient3 RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle < 1％ 362°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL 2020/6/8 A.1 EMP85N10CS LIMITS ±20 73 46 12 10 269 28 39.2 19.6 69.4 27.8 2 1.3 -55 to 150 UNIT V A mJ W W °C MAXIMUM 1.8 62 UNIT °C/W P.1 EMP85N10CS ▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS MIN STATIC Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4 On-State Drain Current1 Drain-Source. |
| Datasheet |
 EMP85N10CS Data Sheet
PDF 446.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMP8020 |
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| 2 | EMP8021 |
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| 3 | EMP8040 |
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| 4 | EMP8041 |
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| 5 | EMP8042 |
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| 6 | EMP8046 |
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| 7 | EMP8110 |
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| 8 | EMP8130 |
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| 9 | EMP8165 |
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| 10 | EMP8165A |
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Desde 2024. D4U Semiconductor.
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